Nitride Semiconductors

Nanosphere Lithography for Nitride Semiconductors

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Polarization induced electron populations in III - V nitride semiconductors

Polarization induced electron populations in III-V nitride semiconductors Transport, growth, and device applications by Debdeep Jena The III-V nitride semiconductors (GaN, AlN, InN) exhibit unusually large electronic polarization fields. These polarization fields can be engineered to achieve carrier confinement, doping, and band engineering in novel ways. This work presents work in engineering ...

Application of Atom Probe Tomography to Nitride Semiconductors

A decade ago, atom probe tomography (APT) was applied almost exclusively to the study of metals, since the study of materials with lower conductivities, such as semiconductors, was considered pragmatically to be very difficult. The advent of commercially-available laser-pulsed APT systems has since enabled the increasingly widespread application of APT to semiconductors, with particularly notab...

Cathodoluminescence Hyperspectral Imaging of Nitride Semiconductors: Introducing New Variables

Cathodoluminescence (CL) hyperspectral imaging—the acquisition of a full optical emission spectrum at each pixel of an image—has become firmly established as a measurement mode in scanning electron microscopy (SEM) [1]. CL is sensitive to the structural, compositional and electrical properties of a sample, and the inherent multimode nature of SEM makes it possible to combine CL with other techn...